Reflection, Transmission and Absorption Behaviour of 3C-SiC over Temperature

When plotting the percentage of transmitted, reflected and absorbed laser power over the incident laser power on a 3C-SiC (200nm thick) sample, I measured that transmission stays almost constant, while reflection decreases and absorption increases about 20%. Does someone have an explanation for this or a reference where this also happens? I tried searching for 3C-SiC absorption behaviour over temperature, but could only find examples for 4H-SiC and 6H-SiC.